【摘要】 文章研究了p-GaN/i-GaN/n-A l0.3Ga0.7N异质结背照式p-i-n可见盲紫外探测器的制备与性能。器件的响应区域为310~365nm,最大响应率为0.046A/W,对应的内量子效率为19%,优值因子R0A达到1.77×108Ω.cm2,相应的在363nm处的探测率D*=2.6×1012cmHz1/2W-1。更多还原

【Abstract】 A backside-illuminated visible-blind ultraviolet detector based on an AlGaN p-i-n heterostructure has been successfully fabricated and tested.The p-i-n photodiode structure consists of 1.0μm n-type Al_0.3Ga_0.7N:Si layer grown by MOCVD onto a low temperature AlN buffer layer on a polished sapphire substrate.On top of the layer is a 0.25μm undoped GaN active layer and a 0.25 μm p-type GaN:Mg top layer.Round mesas of mesas of area A=（1.96）×10^-3cm² are obtained by ICP（Inductively Coupled Plasma etching） etching using Cl₂,BCl₃ and Ar.The photodiode exhibits a spectral responsivity band from 310nm to 365nm.Maximum responsivity R=0.046A/W,corresponding to an internal quantum efficiency of 19% and R₀ values up to 1.77×10⁸Ω·cm² are obtained,corresponding to D^*=2.6× 10¹²cmHz^1/2W^-1.更多还原