【摘要】 对于MBE原位掺杂,HgCdTe的N型掺杂比较容易,而P型掺杂相对来说难度比较大。作为掺杂杂质的As表现出两性掺杂行为,在富Te的条件下生长,As有很大的几率进入到阳离子位置处。而As必须进入Te位才能参与导电,表现为P型。因此,采取了多种方法,现已获得1016~1018cm-3掺杂水平的P型材料。在成功实现As的掺杂后,研究人员对激活退火做了一些研究。研究发现,需要在汞压下经过高温退火,As原子才能占据Te位成为受主杂质。对As在碲镉汞中的扩散系数也进行了研究。更多还原

【Abstract】 Compared with N-type doping,P-type doping in MBE HgCdTe is more difficult.For Te-rich MBE growth condition,arsenic has more chance gone into cation position than anion,as acts as acceptor only when it gone into Te site.By using arsenic crack cell,we have found the way to achieve P-type doping in 10¹⁶¹0¹⁸cm^-3 levels.To activate arsenic,the annealing condition was studied,and it was found that arsenic could go into Te site and acts as acceptor only when annealing under mercury pressures.Arsenic diffusion in HgCdTe was also studied.更多还原