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半导体功率放大激光器耦合效率的研究
Study on the Coupling of Laser with Semiconductor Power Amplification
【摘要】 通过对波长808nm的GaA lAs/GaAs半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了其涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。
【Abstract】 The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of GaAlAs/GaAs laser with semiconductor power amplification,and with a wavelength of 808 nm.The transmissivities of cavity faces have been increased from 69% and 32.6% without coatings to above 90% and 80%with coatings.The coupling efficiency of device,output power of laser and operating lifetime have been improved.
【关键词】 半导体功率放大;
耦合效率;
减反射膜;
【Key words】 semiconductor power amplification; coupling efficiency; antireflection films;
【Key words】 semiconductor power amplification; coupling efficiency; antireflection films;
- 【文献出处】 激光与红外 ,Laser & Infrared , 编辑部邮箱 ,2006年10期
- 【分类号】TN248
- 【被引频次】2
- 【下载频次】92