【摘要】 文章用金相显微镜观察、统计了InSb晶片扩散前、后,经择优腐蚀后呈碟形坑的表面微缺陷。结果显示这类缺陷的一部分是InSb晶体原生缺陷,一部分由扩散诱生。分析后认为由扩散诱生这类缺陷的原因主要为晶片表面粘污,已证实清洗更洁净的晶片,能有效抑制扩散过程中诱生的这类缺陷。更多还原

【Abstract】 Microdefects in the InSb wafer surface which appear as saucer pits by a preferential etching are observed and counted before or after diffusion by means of microscope.The result shows that some of the defects are native to the starting material.some of the defects are induced by diffusion.It is found that the reason induced the defects by diffusion is contamination in the InSb wafer surface.It is showed that the defects induced by diffusion are suppressed in the.clean InSb wafer surface.更多还原