【摘要】 用改进后的化学浴沉积法制备了纳米Cu2O薄膜,并对成膜条件及膜的性能进行了研究.结果表明:化学浴沉积法改进后有利于制备高质量的纳米Cu2O薄膜;最佳反应温度为60~70℃,此温度范围内Cu2O薄膜的膜厚随着循环次数线性增加,制备的薄膜纯度较高,表面较平整和致密,Cu2O粒径为14~22 nm,其禁带宽度为2.01 eV.更多还原

【Abstract】 Cuprous oxide thin films have been deposited by modified chemical bath deposition method.Effects of some technological factors for Cu₂O thin films deposition and properties of the films have been investigated.The results show that the modified chemical bath deposition method benefits the preparation of nano-Cu₂O thin films with high quality and the optimal bath temperature is 60⁷0°C.In such conditions,film thickness of high pure Cu₂O increases linearly with number of cycles,the Cu₂O films with diameters between 14 nm and 22 nm are in uniform,and the band gap of the films as prepared is 2.01 eV.更多还原