【摘要】 报道了以AlCl3和Mg3N2为反应物,在500℃条件下,用简易的设备,合成六方相AlN纳米材料.样品的XRD和XPS图谱表明,实验得到的AlN样品是纯的六方相AlN,其中的杂质相含量均小于仪器的探测灵敏度.TEM图表明,AlN样品呈多孔网络状结构,网络的骨架大小在10～20nm之间.对AlN样品的光学性能的研究表明,AlN样品的禁带宽度值约为6.12eV;红外吸收谱以680cm-1为中心形成一个很宽的红外吸收带;其拉曼散射峰较AlN薄膜和AlN单晶向低波数方向移动.更多还原

【Abstract】 Aluminum nitride (AlN) nanocrystals were successfully synthesized from the reaction of AlCl3 and Mg3N2 at the temperature of 500 ℃ using simple equipments. The XRD and XPS show that the obtained samples are pure hexagonal AlN and the level of impurity in the samples is lower than the resolution limit of the spectrometers. The TEM image shows that the shape of the AlN samples is reticular, and the size of the skeleton of the reticular structure is about 10～20 nm. The optical properties of the AlN samples were also investigated. The results show that its band-gap value is 6.12 eV, there is an intensive and board band cen- tered at 680 cm-1 in its FT-IR spectrum and its Raman frequencies are lower than that of AlN films and AlN single crystals.更多还原