【摘要】 将p型单晶硅在HF溶液中进行阳极电化学腐蚀制备出孔隙率约为30%~85%、直径为2~30nm不等的多孔硅,用原子力显微镜(AFM)观察其表面形貌。采用电化学工作站(CHI660A)监测p型硅电极在不同浓度HF溶液中的电流-电压特性,记录恒电流情况下硅电极的电压变化。这些曲线可从精确反映多孔硅形成的早期成核过程。将这些电化学特性曲线在同一坐标轴下显示,得出多孔硅的电化学成核机理。更多还原

【Abstract】 Porous Silicon (PS) with porosity of 30%～85% and width range of 2～30nm, was fabricated by electrochemical anodic etching of p-type Silicon in HF solution. Surface morphologies of fabricated PS were observed by Atomic Force Microscopy (AFM). I-V characteristics of p-type Silicon electrode in HF solutions with different concentrations and electrochemical potential transients under galvanostatic condition, which accurately reflect the early-stage nucleation process of PS, were monitored by the electrochemical workstation (CHI660A). Putting the relative curves on the same coordinate axis, the basic electrochemical regularites of PS nucleation process were obtained.更多还原