【摘要】 利用高分辨率X射线衍射技术对分子束外延CdTe(211)B/Si(211)材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的对称衍射面和非对称衍射面的倒易空间图,对CdTe缓冲层的剪切应变状况进行了分析。研究发现,对于CdTe/Si结构,随着CdTe厚度的增加,[1-1-1]、[01-1]两个方向的剪切角[γ1-1-1]和[γ01-1]都有变小的趋势,且[γ1-1-1]的大小约为[γ01-1]的两倍;对于CdTe/ZnTe/Si结构,ZnTe缓冲层的引入可以有效地降低CdTe层的剪切应变。更多还原

【Abstract】 The shear strain of MBE grown CdTe(211)B epilayers on 76.2 mm Si(211) substrates were measured using reciprocal space maps in the symmetric and asymmetric reflection by high resolution X-ray diffraction.The results show that for CdTe/Si heterostructure,the shear angle γ is about the half of γ,and they reduce with the CdTe film′s thickness increasing.For CdTe/ZnTe/Si heterostructure,the ZnTe buffer can reduce the shear strain in CdTe films effectively.更多还原