【摘要】 硼离子注入p型HgcdTe薄膜材料制备的光伏型红外探测器光敏元实际面积对器件结构的优化设计、器件性能研究具有重要意义．通过高分辨率、非直接接触的激光束诱导电流谱表征手段获取 HgCdTe光伏型器件单元的几何结构信息,结果表明离子注入形成的n型区域的面积明显大于离子实际注入的区域面积。更多还原

【Abstract】 A measurement system of laser beam induced current (LBIC) with high spatial-resolution and without requiring any direct electrical contact is presented. It has been widely applied to study the electrical non-uniformities at the surface of the semiconductor materials and devices. The line scan and mapping profiles of a series of HgCdTe p-n junctions have been demonstrated. The region of p-to-n type conversion by boron ions implantation is larger than the real implanted area.更多还原