【摘要】 用双势垒模型研究了半导体异质结量子阱的隧穿特性.利用电子波函数的连接条件,先计算出电子通过一简单方势垒的隧穿几率,再利用转移矩阵方法得到电子通过双势垒的隧穿几率.所得结果能较好地解释半导体量子阱结构中的共振隧穿现象.更多还原

【Abstract】 The tunneling characteristics of the semicondoctor quantum well through a double-barrier potential model is studied.First,the transmission probability for an electron tunneling through a single rectangular barrier is calculated by the continuous condition of the wave function,then the transmission probability for an electron transverses through a double-barrier structure is also obtained by means of transfer matrix.The results obtained can explain the phenomenon of resonant tunneling for the semiconductor quantum well structures.更多还原