The n-type gallium nitride (GaN) films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature to a dose range from 1013 to 1016 cm-2. All the implanted GaN samples were annealed at 900℃ for 10 min in a flowing nitrogen environment. The effects of the implanted ion species on the blue luminescence (BL) band of GaN material were investigated by the photoluminescence (PL) spectra taken at room temperature. And based on the experimental data, we can conclude that the BL ba...
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