Porous Silicon(PS) was prepared by pulsed and DC electrochemical etching method under the same etching conditions.The scanning electron microscopy(SEM) and the photoluminescence(PL)observation showed that the porous Silicon surface prepared by pulsed etching was more uniform and the Silicon particles were smaller.The intensity of PL was enhanced.At the same time,we observed that the smaller the dimension of the PS,the broader energy gap of the PS.It concluded that the PL of our samples accorded with the mec...
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