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C-S-H表面上吸附态C1~-离子的分布特点

Distribution Characteristic of C1~- ions on the Surface of C-S-H

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【作者】 王春梅吕秀玲张彩文

【Author】 WANG Chun-mei,LU Xiu-ling,ZHANG Cai-wen(College of Material Science and Engineering,Hebei Polytechnic University,Tangshan Hebei 063009,China)

【机构】 河北理工大学材料学院河北理工大学材料学院 河北唐山063009河北唐山063009

【摘要】 应用表面物理化学理论,分析了C-S-H在不同浓度、不同种类氯化物溶液中浸泡后ζ电位发生变化的原因,并在此基础上推测了被吸附的C1-离子在C-S-H表面上的分布状态。C1-离子似乎是C-S-H的特性吸附离子,只要C-S-H浸泡于氯化物溶液中,C1-离子将优先进入吸附层。吸附于C-S-H表面的C1-离子的总量包括吸附层中的C1-离子量和扩散层中的C1-离子量。随浸泡液中C1-离子浓度的增大,C1-离子不断进入吸附层,但吸附层的空间是有限的,吸附层中C1-离子增加的速度逐渐减慢。扩散层的C1-离子量取决于ζ电位的大小。在较高浓度的A lC l3溶液中浸泡的C-S-H对C1-离子的吸附量显著增大,由于此时双电层已显著变薄,因而不能忽略C-S-H表面长程范氏力对C1-离子的吸引作用。

【Abstract】 Using the theory of surface physical chemistry,the reasons that ζpotential of C-S-H after dipping in different kinds of chloride solutions with different concentration changes is analyzed,on the basis of which the distribution of C1-ions on the surface of C-S-H is speculated.It seems that C1-ions are specific adsorbed ions for C-S-H So long as C-S-H is dipped in and chloride solution,C1-ions will enter Stern layer first.The total amount of C1-ions adsorbed on the surface of C-S-H includes both the amount of C1-ions in Stern layer and the amount of C1-ions in the diffuse layer.With the increase of the concentration of C1-ions in the solution that C-S-H samples are dipped,C1-ions enter into Stern layer continuously.However the room of Stern layer is finite,the increment speed of C1-ions in Stern layer slows down gradually.The amount of C1-ions in the diffuse layer depends on ζ potential.The amount of C1-ions adsorbed by C-S-H that is dipped in AlCl3 solution with higher concentration increases remarkably.Because here and now the thickness of electrical double layer has decreased evidently,the attraction of long-distance Van der walls force from C-S-H surface for C1-ions is incapable of being ignored.

【关键词】 吸附C-S-Hζ电位C1-离子吸附层:扩散层
【Key words】 adsorptionC-S-Hζ potentialC1~-ionStern layerthe diffuse layer
【基金】 河北省自然科学基金资助503353
  • 【文献出处】 河北理工学院学报 ,Journal of Hebei Institute of Technology , 编辑部邮箱 ,2006年01期
  • 【分类号】O647.31
  • 【被引频次】10
  • 【下载频次】137
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