节点文献
多量子阱中注入载流子的非均匀分布
Non-Uniform Distribution of Injected Carriers in Multiple Quantum Wells
【摘要】 根据多量子阱中注入载流子的输运机制,计算了多量子阱中注入载流子的非均匀分布.引入不均匀度参量Asy来衡量载流子分布的不均匀程度,分析了各种敏感因素对载流子非均匀分布的影响.指出注入载流子分布的非均匀性,随量子阱数、注入电流、量子垒高度的增加而显著增加,随工作温度的升高而减小.
【Abstract】 Based on the injected carrier transportation mechanisms in multiple quantum wells (MQW), non-uniform distribution of injected carrie rs in MQW was computed numerically.And several parameters,which significantly af fect the carrier non-uniform distribution in MQW,were investigated. Results sho w that with the increase of the number of quantum wells, injected current and qu antum barrier height increases the non-uniformity of carrier distribution in MQ W,but with the decrease of working temperature it will also decrease.
【关键词】 半导体器件与技术;
多量子阱;
注入载流子;
非均匀分布;
【Key words】 Optoelectronics and Laser technology; MQW; Injected carrier; Non-uniform distribution;
【Key words】 Optoelectronics and Laser technology; MQW; Injected carrier; Non-uniform distribution;
【基金】 深圳市科技计划项目(200515);广东省关键领域重点突破项目(No.2B2003A107);深圳大学省、部重点实验室开放基金资助
- 【文献出处】 光子学报 ,Acta Photonica Sinica , 编辑部邮箱 ,2006年09期
- 【分类号】TN301
- 【被引频次】4
- 【下载频次】178