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低温生长GaAs在Nd∶YVO₄激光器中调Q特性的研究

Study on the Characteristics of Q-switching Nd∶YVO₄ Laser with GaAs Grown at Low Temperature

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【Author】 Jiang Qichang1,Zhuo Zhuang 1,2 ,Wang Yonggang 3,4 ,Li Jian1,Su Yanli1,Ma Xiaoyu3,Zhang Zhigang4,Wang Qingyue4 1 College of Physics and Electronics,Shandong Normal University,Jinan 250014 2 Shanda Luneng Information & Technology Co.Ltd,Jinan 250100 3 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 4 College of Precision Instrument and Opto-Electronics Engineering,Institute of laser and Optoelectronics,Ultra fast Laser Lab,Tianjin University,Tianjin 300072

【机构】山东师范大学物理与电子科学学院；山大鲁能科技有限责任公司济南250100；中国科学院半导体研究所；天津大学精密仪器与光电子工程学院超快激光实验室；济南250014；北京100083；天津300072；

【摘要】采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜,实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2W时,获得的最短脉冲半峰全宽为15ns,最大单脉冲能量为4.84μJ,最高峰值功率为330W,最大平均输出功率为1.16W;脉冲重复频率在220kHz到360kHz之间.更多还原

【Abstract】 A diode-pumped passively Q-switched Nd∶YVO₄ laser was demonstrated by using GaAs film growing at a low temperature.The threshold power at the Q-switching is 2 W.The shortest pulse duration is 15 ns.The highest single pulse energy is 4.84 μJ and the highest peak power is 330 W.The repetition rate varies between 220 kHz and 360 kHz and the highest average output power is 1.16 W.更多还原