【摘要】 以CH3CH2OH为溶剂,CuCl和InCl3为反应物,H2S为硫源,用离子层气相反应法制备了CuInS2半导体薄膜。用X射线衍射、X射线光电子谱、扫描电镜和紫外-可见光谱等对薄膜的晶型、表面化学组成、表面形貌及光电性能进行了表征。分析了混合前驱体溶液中阳离子浓度比[Cu]/[In]对薄膜化学计量及性能的影响。[Cu]/[In]≥1.25时,可获得黄铜矿结构的CuInS2薄膜,其单相形成区外[Cu]/[In]为1.45～1.65。更多还原

【Abstract】 The CuInS2 thin films were prepared by ion layer gas reaction using C2H5OH as a solvent,CuCl and InCl3 as reagents and H2S gas as sulfuration source.The structural,chemical,topographical development and the photoelectric properties of thin films were investigated by X-ray diffraction,scanning electron microscopy,X-ray photoelectron spectroscopy and ultraviolet-visible spectros-copy.The effects of precursor solution on the stoichiometry of CuInS2 films were investigated.The results show that CuInS2 film with the complete chalcopyrite structure is obtained at [Cu]/[In]≥1.25,and near stoichimetric CuInS2 without any segregation phases is obtained in the range of 1.45—1.65.更多还原