【摘要】 采用射频磁控溅射法在镀氧化铟锡的Corning1737玻璃基片上制备了用于无机电致发光显示器绝缘层的Ba0.5Sr0.5TiO3介电薄膜,该薄膜厚约400nm。研究了O2和Ar+O2的体积比V(O2)/V(Ar+O2)对薄膜沉积速率、结晶性和介电性能的影响。当V(O2)/V(Ar+O2)由0增加至0.5时,薄膜的结晶取向、介电常数、介电损耗、击穿场强和漏电流密度并没有明显的规律性可循。V(O2)/V(Ar+O2)为0.1时,薄膜的品质因子最好,其值为5μC/cm2。更多还原

【Abstract】 400 nm thick Ba0.5Sr0.5TiO3 thin films used as insulating layer in thin film electroluminescent devices were prepared on indium tin oxide-coated Corning 1737 glass by radio frequency magnetron sputtering, and the effect of volume ratio of O2 to Ar+O2 V(O2)/V(Ar+O2) on deposition rate, crystallinity as well as dielectric properties of the Ba0.5Sr0.5TiO3 thin films were investigated. The preferred orientation, dielectric constant, dielectric dissipation, breakdown strength and leakage current density do not follow a clearly regular trend when the V(O2)/V(Ar+O2) is varied from 0 to 0.5. The optimal figure of merit is 5 μC/cm2 at a V(O2)/V(Ar+O2) of 0.1.更多还原