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PTCDA/ITO表面和界面的X射线光电子能谱分析
Surface and Interface Analysis of PTCDA/ITO Using X-Ray Photoelectron Spectroscopy(XPS)
【摘要】 利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析。结果表明,环上的C原子的结合能为284.6 eV,酸酐中的C原子的结合能为288.7 eV,并存在来源于ITO膜中的氧对C原子的氧化现象,界面处C(1s)谱中较高结合能峰消失,且峰值向低结合能发生化学位移;C O键中O原子的结合能为531.5 eV,C—O—C键中的O原子的结合能为533.4 eV。
【Abstract】 X-ray photoelectron spectroscopy(XPS) of surface and interface of PTCDA/ITO in PTCDA/p-Si organic-on-inorganic photoelectric detector was investigated. From C1s fine spectrum we found that the binding energy of C atoms in perylene rings was 284.6 eV;and the binding energy of C atoms in acid radical was 288.7 eV;moreover,some C atoms were oxidized by O(atoms) from ITO.The binding energy of O atoms in CO bonds and C—O—C bonds was 531.5 and 533.4 eV,respectively.At the interface,the peak of high binding energy in C1s spectrum disappeared,and the main peak shifted toward lower binding energy.
【Key words】 Surface and interface; X-ray photoelectron spectroscopy(XPS); PTCDA/ITO;
- 【文献出处】 光谱学与光谱分析 ,Spectroscopy and Spectral Analysis , 编辑部邮箱 ,2006年04期
- 【分类号】O433.4
- 【被引频次】7
- 【下载频次】319