【摘要】 对808 nm大功率半导体激光器腔面硫钝化处理的工艺进行了研究,发现腔面硫钝化可以提高激光器的输出特性以及其可靠性,输出功率提高了16.7%;经过1 500 h老化实验后,硫钝化的半导体激光器没有明显退化,而未处理的激光器退化严重,输出功率降低了36.8%。实验表明,硫钝化时间对激光器钝化效果有很大影响,激光器腔面硫钝化时间过长会造成其损伤,使其可靠性反而下降;硫钝化5 m in效果为最佳。更多还原

【Abstract】 A sulfur-passivation technique for facet of 808 nm laser diodes（LD） has been investigated.The treatment of facet of LD can improve the output characteristics and reliability.Output power increases by 16.7%.LD passivated using（NH₄）₂S gives no evidence of degradation after 1 500 hours of aging experiment.LD of non-sulfur-passivation severely degrades,its output power decreases by 36.8%.The time of sulfur-passivation produces great difference on the passivation result of LD.The experiment indicates that long time passivation can damage facet causing degradation of LD.5 min sulfur-passivation is best.更多还原