【摘要】 详细分析并讨论了相位体制数模转换器(DAC)动态参数的表征方法,提出用无杂散动态范围(SFDR)、近区谐波失真(TH D 6)、有效工作带宽(EW B)、输出信号功率及正交输出信号幅度一致性来全面描述相位DAC的频域性能。采用上述方法对利用南京电子器件研究所标准76 mm G aA sM ESFET全离子注入工艺流片得到的3b it相位DAC进行了频域测试。结果显示其EW B大于1.5 GH z,转换速率大于12 G bps,全频带内输出信号的正交精度低于4%,幅度一致性低于26%(大多数测试点低于10%)。在500 MH z输入信号下,其SFDR、TH D 6分别为33.8 dB c-、33.7 dB c。该相位DAC的动态参数良好,尤其正交性能优异。更多还原

【Abstract】 Detailedly analyzed is the characterization of phase DAC’s dynamic performance which can be fully defined using such parameters as spurious-free dynamic range(SFDR),near range harmonic distortion(THD6),effective work bandwidth(EWB),output signal power and coherency of two orthogonal output signal.This method is used to describe the dynamic performance of a GaAs 3 bit phase DAC fabricated by Nanjing Electronic Devices Institute’s standard 76 mm full ion-implanted GaAs MESFET process.This 3 bit phase DAC exhibits more than(1.5) GHz EWB,higher than 12 Gbps conversion rate,less than 4% orthogonal accuracy of output signals with full bandwidth and less than 26% amplitude coherency(less than 10% at most test points).With 500 MHz input signals,its SFDR and THD6 are 33.8 dBc,-33.7 dBc,respectively.The above results show that its frequency performance is good,and its phase accuracy is excellent.更多还原