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隧道再生双有源区AlGaInP发光二极管提取效率的计算

Calculation of the Extraction Efficiency in Tunneling-regenerated Double-active-region AlGalnP Light-emitting Diodes

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【Author】 TIAN Yongtao ZHANG Zhihua GUO Weiling SHEN Guangdi(College of Physics Science and Technology, University of Petroleum (East China), Dongying, Shandong, 257061, CHN) (College of Information and Control Engineering, University of Petroleum (East China),Dongying, Shandong, 257061, CHN) (Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing, 100022. CHN)

【机构】中国石油大学(华东)物理科学与技术学院；中国石油大学(华东)信息与控制工程学院；北京工业大学北京市光电子技术实验室；北京工业大学北京市光电子技术实验室山东东营257061北京工业大学；北京市光电子技术实验室；北京； 100022；山东东营257061；北京100022；

【摘要】建立了发光二极管提取效率的理论计算模型,分析了影响隧道再生双有源区AlGaInP发光二极管提取效率的主要因素,包括从出光表面出射的光、体内的光吸收损耗、衬底对光的吸收损耗、金属电极对光的吸收损耗,模拟计算了隧道再生双有源区AlGaInP发光二极管的提取效率,计算得到隧道再生双有源区AlGaInP LED管芯的上有源区和下有源区提取效率分别为5．24％和9．16％。更多还原

【Abstract】 A method for calculating the extraction efficiency of light-emitting diodes is offered. The determinants of the extraction efficiency of tunneling-regenerated double-active-region (TRDAR) AlGalnP light-emitting diodes are investigated, including light escaping through the top surface, light loss due to absorption of diode bulk, light loss due to absorption of substrate and anode. The extraction efficiency of tunneling-regenerated double-active-region AlGalnP light-emitting diodes is calculated. The extraction efficiency of 5. 24% and 9.16% for the top active region and the bottom active region are obtained respectively in TRDAR LED chips.更多还原

【关键词】铝镓铟磷；发光二极管；隧道结；提取效率；
【Key words】 AlGalnP； light-emitting diodes； tunneling junction； extraction efficiency；

【基金】本文得到973计划(批准号：G20000683-02);国家基金(60077004);市教委项目(KP0204200201)的资助

【文献出处】固体电子学研究与进展 ,Research & Progress of SSE Solid State Electronics , 编辑部邮箱 ,2006年01期

【分类号】TN312.8
【被引频次】1
【下载频次】124

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