【摘要】 采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜。用X射线衍射(XRD)、傅立叶红外吸收(FTIR)谱、X射线光电子能谱(XPS)和扫描电镜(SEM)对样品的结构、组分和形貌进行了分析。结果显示所得样品为六方纤锌矿结构的GaN多晶薄膜。更多还原

【Abstract】 GaN thin films were prepared on Si(111) substrates by electrophoretic deposition(EPD) technique.Measurement results by X-ray diffraction(XRD),Fourier transform infrared(FTIR) spectroscopy and X-ray photoelectron spectroscopy(XPS) indicate that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the Si(111) substrates.The surface morphology of the as-prepared GaN films was examined by scanning electron microscopy(SEM).更多还原