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STO铁电薄膜晶化动力学研究

Crystal dynamics of STO ferroelectric films

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【作者】 张勤勇李言荣蒋书文

【Author】 ZHANG Qin-yong~1,2,LI Yan-rong~1,JIANG Shu-wen~1(1.School of Microelectronics and Solid Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;2.School of Materials,Xihua University,Chengdu 610039,China)

【机构】 电子科技大学微电子与固体电子学院电子科技大学微电子与固体电子学院 四川成都610054西华大学材料学院四川成都610039四川成都610054

【摘要】 从经典的成核长大理论出发,建立了STO铁电薄膜的晶化动力学模型,根据模型模拟了热处理温度以及升温速率对STO铁电薄膜微结构的影响。模拟计算结果表明,在热处理温度较低的情况下,薄膜的晶粒较大,晶粒尺寸分布也较宽。随着晶化温度的升高,晶粒生长受到抑制,晶粒较小。当升温速率较小时,晶粒生长充分、晶粒较大,但晶粒大小分布不均匀。当升温速率较大时,薄膜晶粒大小分布均匀,晶粒较小。模拟计算结果与实际情况一致。

【Abstract】 According to classic theory of crystalline nucleus formation and growth,crystal dynamics model of STO ferroelectric films was studied.Then,the influences of annealing temperature and its increasing rate on the microstructures of STO films were calculated by this model.The results show that STO film grain size is larger and has wide distribution at lower annealing temperature.However,with the increase of annealing temperature to some extent,crystalline nucleus formation ratio increase greatly.The increase of grain size is compressed,which results in smaller grain size.When annealing temperature increasing rate is lower,crystal growth is sufficient,which results in larger grain size.But grain size distribution is wide.At higher annealing temperature ascending rate,grain size is smaller and the grain size distribution is narrow.These simulation results are consistent with our experiments.

【关键词】 STO铁电薄膜晶化动力学热处理
【Key words】 STOerroelectric filmscrystal dynamicsannealing
【基金】 国家重大基础研究资助项目(51310)
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2006年07期
  • 【分类号】O484
  • 【被引频次】3
  • 【下载频次】158
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