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脉冲激光沉积方法生长硅基ZnO薄膜的特性(英文)

Growth and characteristics of zinc oxide thin fil ms on silicon(111) by pulsed laser deposition

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【作者】 何建廷庄惠照薛成山田德恒吴玉新刘亦安胡丽君薛守斌

【Author】 HEJian-ting,ZHUANG Hui-zhao,XUE Cheng-shan,TIAN De-heng,WU Yu-xin,LI U Yi-an,HULi-jun,XUE Shou-bin(Institute of Semiconductor,Shandong Nor mal University,Ji’nan250014,China)

【机构】 山东师范大学半导体研究所山东师范大学半导体研究所 山东济南250014山东济南250014

【摘要】 用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜。X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn—O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构。利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜。

【Abstract】 ZnOthin fil ms were deposited on n-Si(111) substrates by pulsed laser deposition(PLD).X-ray diffraction(XRD)showed that there was only one sharp diffraction peak at 2θ=34°with the full width at the half maxi mum(FWHM) of 0.75°.Fourier transforminfrared spectrophotometer(FTIR) presented a intensely cliffy absorption peak located at 414.92nm whichwas resulted fromZn—Obonds.Photoluminescence(PL) gave us twolight emission bands,corresponding to the wavelength of370 and 460nm.Scanning electron microscopy(SEM) and selected-area electron diffraction(SAED) were employed to analyzethe morphology and crystal lattice structure of ZnOthin fil ms.ZnOthin fil ms which had an excellentlyc-axis preferred orienta-tion and a hexagonal wurtzite structure were prepared.

【关键词】 PLDZnO薄膜六方纤锌矿结构
【Key words】 PLDZnOthin fil mshexagonal wurtzite structure
【基金】 ThisworkissupportedbyNationalNatureScienceFoundationofChina(90301002,90201025)
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2006年06期
  • 【分类号】TN304.05
  • 【被引频次】1
  • 【下载频次】114
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