【摘要】 用射频磁控溅射在硅衬底上淀积ZnO薄膜,随后进行I-V-T测量。实验结果显示硅基氧化锌接触具有异质结特性,异质结的电流输运机制为热发射和电流隧穿。用I-V-T测量的结果拟合计算了势垒高度和理想因子,结果发现ZnO/P-Si势垒高度随温度降低而减小理想因子则升高。异质结的这种反常的随温度变化的关系可以用肖特基势垒不均匀性理论解释。样品经Air~800℃热退火后势垒高度与未退火相比上升,说明热退火改善了氧化锌薄膜的结晶质量,减少了界面态影响。更多还原

【Abstract】 Al-doped zinc-oxide(ZnO∶Al) films are obtained by RF magnetron sputtering.Based on an investigation of electrical properties of the films using I-V-T measurement,it is shown that the ZnO contact with the Si substrate has a property of heterogeneity-junction.The mechanisms of the electric current transport in the heterogeneity-junction are thermoemission and tunnel.We have found the potential of ZnO/P-Si decrease by temperature fallen while the ideality factor increases by calculating the result obtained through I-V-T measurement.This abnormal behavioral of heterogeneity-junction can be explained by Schottky potential asymmetrical.Compared with unanneal samples,the samples annealed in Air～800℃ have a higher potential.It has show that anneal can improve the quality of the ZnO films,and reduce the effect of interface state.更多还原