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β-Ga₂O₃单晶浮区法生长及其光学性质

Floating zone technique growth of β-Ga₂O₃ single crystals and their optical properties

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【Author】 ZHANG Jun-gang~(1,2),XIA Chang-tai~1,WU Feng~1,PEI Guang-qing~(1,2),XU Jun~1,DENG Qung~3,XU Wu-sheng~3,SHI Hong-sheng~3(1.Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Science,Shanghai 201800,China;2.Graduate School of the Chinese Academy of Science,Beijing 100039,China;3.GE(China) Research and Development Center Co.Ltd.,Shanghai 201203,China)

【机构】中国科学院上海光学精密机械研究所；通用电气中国研究开发中心有限公司；通用电气中国研究开发中心有限公司上海201800；中国科学院研究生院；北京100039；上海201800；上海201203；

【摘要】用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶,对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn4+和Ti4+的掺杂对其紫外吸收边影响。-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。更多还原

【Abstract】 β-Ga₂O₃ single crystals,the wide band gap semiconductor,were grown using floating zone technique.Their optical absorption and fluorescence spectra were studied and explained the reason for the part broaden of absorption spectra.The dopants’(Sn⁴⁺ and Ti⁴⁺) affections on UV absorption spectra were also studied.Not only the three characteristic emission bands of β-Ga₂O₃ single crystal,but the bands peaked at 277,297 and 692nm were observed in luminescence.更多还原