【摘要】 半导体晶片的加工质量和精度,直接影响到器件的性能。本文提出了一种超精密加工SiC晶片的方法,并详细论述了化学机械抛光的原理。加工后的SiC单晶片,平整度为±3μm,粗糙度<5nm,且应力较小。更多还原

【Abstract】 The device performance is directly influenced by the processing quality and precision of the semiconductor wafers.This article introduces a method of high-precision processing SiC and explicates in detail the theory of chemi-mecanical polishing.The final flatness of the wafer is about ±3μm,its roughness reaches to less than five nanometers.Stress birefringence image indicates that stress is low in such processing wafer.更多还原