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金属铝诱导法低温制备多晶硅薄膜
Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature
【摘要】 以氢气稀释的硅烷(SiH4)和硼烷(B2H6)为气源,利用等离子体增强化学气相沉积法(PECVD)制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为poly-Si薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.
【Abstract】 Polycrystalline silicon films were fabricated by aluminum-induced crystallization.These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen-diluted SiH4 and B2H6.The effect of thickness of aluminum films on the microstructure and morphology were investigated.The results were analyzed by XRD,RAMAN and SEM.The thickness of aluminum film was found to play a critical role in the extent of crystallization of a-Si thin film.The experiment indicate that a-Si thin films with thickness of aluminum films for sputtering time 10 s were amorphous structure after annealing 450 ℃ for 20 min,a-Si films with thickness of aluminum film for sputtering time 20 s began to crystallize after annealing at 450 ℃ for 20 min,and the crystallinity of a-Si thin films was enhanced obviously with increment of thickness of aluminum films.
【Key words】 aluminum-induced crystallization； rapid thermal annealing； polycrystalline silicon thin films； amorphous silicon thin films；
- 【文献出处】 感光科学与光化学 ,Photographic Science and Photochemistry , 编辑部邮箱 ,2006年02期
- 【分类号】TN304.05
- 【被引频次】10
- 【下载频次】324