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Photoluminescence Properties of Two-dimensional Planar Layer and Three-dimensional Island Layer for ZnO Films Grown Using MOCVD

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【Author】 HUANG Ke-ke~1, HOU Chang-min~1, GAO Zhong-min~1, LI Xiang-shan~1, FENG Shou-hua~ 1** , ZHANG Yuan-tao~2, ZHU Hui-chao~2 and DU Guo-tong~2 1. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry; 2. Department of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China

【Abstract】 ZnO(002) films with different thicknesses ranging from 7 to 300 nm were grown on sapphire(006) substrates via metal-organic chemical vapor deposition(MOCVD). The two-dimensional(2D) planar layer and the three-dimensional(3D) island layer were studied by using of X-ray diffraction(XRD) rocking curves and atomic force microscopy(AFM). The room temperature photoluminescence(PL) spectra show a blue shift of the peak positions of the ultraviolet(UV) emission with increasing film thickness. The blue shift is remarkably high(393380 nm) when an increase in film thickness(715 nm) is accompanied by the change of structure from a 2D planar layer to a 3D island layer. The PL spectra at 77 K also indicate that there are different transition mechanisms in the film thickness from a 2D planar layer to a 3D island layer near the 2D layer region.

【基金】 Supported by the National Natural Science Foundation of China(Nos. 20071013 and 20301007).
  • 【文献出处】 Chemical Research in Chinese Universities ,高等学校化学研究(英文版) , 编辑部邮箱 ,2006年06期
  • 【分类号】O614.241
  • 【下载频次】34
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