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LDA泵浦Nd:YVO4/GaAs饱和吸收调Q激光器
Pulse-LDA-pumped Passively Q-switched Nd:YVO4 Laser with GaAs as Saturable Absorber
【摘要】 用脉冲激光二极管阵列(LDA)作为泵浦源,微柱透镜阵列和透镜导管作为耦合系统,以As+注入GaAs可饱和吸收片作为被动调Q元件,实现了Nd:YVO4激光器每泵浦脉冲单调Q脉冲输出。获得调Q脉冲宽度为7ns,脉冲峰值功率为3.4kW,激光器调Q效率为26.8%。对泵浦脉冲峰值、脉冲宽度和重复频率对调Q脉冲特性的影响进行了实验研究,并对实验结果进行了讨论。
【Abstract】 A passively Q-switched pulse laser diode array(LDA)-pumped Nd:YVO4 laser that uses As+ implanted GaAs as a saturable absorber is demonstrated.In the experiment,a Q-switching pulse width of 7 ns with a pulse energy of 23.5 μJ is achieved which is the shortest pulse width in a passively Q-switched Nd:YVO4 laser using GaAs as saturable absorber.The laser produces only one Q-switching pulse in every pumping pulse duration with a Q-switching efficiency of 26.8%.We also investigate the characteristics of the Q-switched pulse by varying the pumping pulse amptitude,pulse width and repetition respectively.The experimental results are discussed as well.
【Key words】 laser diode array(LDA); As+ implanted GaAs; passively Q-switch; Nd:YVO4 crystal;
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2006年12期
- 【分类号】TN248
- 【被引频次】4
- 【下载频次】146