【摘要】 通过利用突变结PIN理想结构电场分布模型,分析了该结构发光二极管(LED)反向击穿电压与非故意掺杂有源区厚度的线性相关性。通过利用LP-MOCVD技术生长了不同厚度多量子阱(MQW)有源区AlGaInP LED,测量了器件的反向击穿特征,测试结果与理论分析非常吻合。同时获得了AlGaInPMQW结构的临界反向击穿电场强度数值。这些结果可以作为具有PIN结构的LED性能优化的重要参考。更多还原

【Abstract】 The linear relation between the reverse breakdown voltage and un-doping active region′s thickness of PIN light emitting diode(LED) was analyzed by using the ideal PIN structure′s electric field distribution model.LEDs with varied un-doping multi-quantum wells(MQWs) active region thickness were grown with LP-MOCVD,and the breakdown voltage was confirmed to be linear with the thickness of the un-doping active region.At the same time,the critical breakdown electric intensity of AlGaInP MQW structure was obtained.The results were very useful during the optimizing process for the PIN LED′s structure.更多还原