【摘要】 开发了用O3氧化钝化多孔Si(PS)的实用工艺方法。O3的基本作用是对Si-Hx和Si悬挂键(DB)的充分氧化,经过随后158 d贮存的老化实验,得到了表面Si-Hx键完全被Si-Ox膜和Si-烷基膜所替代并覆盖的PS,其光致发光(PL)强度达到稳定的增强,这归因于PS纳米晶粒的表面势垒高度的提高以及量子效率的提高。更多还原

【Abstract】 A practical oxidizing technique with O₃ has been developed for the passivation of porous silicon（PS）.The fundamental role of ozonization may be attributed to the strong oxidizing process of the SiH_x species and dangling bonds（DB）.The subsequent 158 d aging effect with the presence of absorbed O₃ molecules is much effective for the oxidizing process.At last we achieve a complete replacement of Si-H_x covered with Si-O_x film and Si-alkyl film.The steady increase of photoluminescence（PL） intensity is due to the increase in barrier’s height efficiency and the increase in quantum efficiency for the nano-crystallites.更多还原