【摘要】 用射频磁控溅射法制备了具有AU/(SI/SIO2)/P-SI结构的样品,利用I-V特性曲线和电致发光(EL)谱对载流子的输运及复合发光过程进行了研究,用位形坐标理论模型分析的结果表明,在SIO2薄膜中存在2个由于缺陷而形成的发光中心,AU膜中的电子和P型SI中的空穴在较高的电场下以FOWL-ER-NORDHEIM(F-N)隧穿方式进入SIO2薄膜,并通过其中的缺陷中心复合而发光。更多还原

【Abstract】 The samples with Au/（Si/SiO₂）/p-Si structures were fabricated using the R.F magnetron sputtering technique.And their carrier transport and electroluminescence mechanism were studied by the I-V curve and EL spectra.Using the configuration coordinate as a theoretical model,the results indicate that there are two defect center in SiO₂ films,the electron in Au and the hole in p-Si enter into SiO₂ film with the Fowler-Nordheim（F-N） tunneling model at a high bias voltage and recombine through these defect centers in SiO₂ film.更多还原