【摘要】 利用硅烷偶联剂KH-570(γ-甲基丙烯酰氧基甲氧基硅烷)水解缩合生成的多面低聚倍半硅氧烷(POSS)溶胶为模板剂,经热解制备低介电多孔薄膜材料.使用FTIR对材料制备过程及形成机制进行动态研究,通过29S i NMR、椭偏仪、氮气吸脱附曲线和TEM等对材料的介电性质、孔洞大小和分布情况进行表征.制备的介电多孔薄膜材料孔洞分布均匀、孔径约1 nm,比表面积为384.1 m2/g,介电常数为2.5的低.更多还原

【Abstract】 POSS sol-gel as the porous silica template was prepared by hydrolyzation and condensation of KH-570（γ-methacryloxypropyltrimethoxy silane）. Porous film with a low dielectric constant was obtained by calcination of POSS template.The process and mechanism of film formation were investigated by FTIR and its structure was characterized by ²⁹Si NMR,Ellipsometr,N₂ adsorption-desorption and TEM.The results show that the film possesses uniform pore with about 1 nm size,dielectric constant 2.5,and S_bet=384.1 m²/g and the effects of the surface modification reagent and it′s concentration on the dielectric property of film were discussed.更多还原