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脉冲腐蚀法制备多孔硅及其光学特性研究

Porous Silicon Fabricated by Pulsed Etching Method and its Optical Properties

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【作者】 李志全; 乔淑欣; 蔡亚楠; 张冉;

【Author】 LI Zhi-quan, QIAO Shu-xin, CAI Ya-nan, ZHANG Ran (Department of Instrument Science and Engineering, Yanshan University, Qinhuangdao 066004, China)

【机构】 燕山大学仪器科学与工程系; 燕山大学仪器科学与工程系 河北 秦皇岛 066004; 河北 秦皇岛 066004;

【摘要】 Labview软件控制腐蚀条件,用脉冲电化学腐蚀法制备多孔硅薄膜,其表面形貌用原子力显微镜观察并分析。用可见-紫外分光光度仪测量其反射谱,通过计算得出各种制备条件下,多孔硅薄膜的其它光学参数,即有效折射率neff,吸收系数α,有效介电常数的实部εer和虚部εei,消光系数K。研究了入射光波长和孔隙率对这些光学常数的影响。

【Abstract】 Porous silicon thin wafer is fabricated by the pulsed etching method controlled by Labview software and surface morphologies are observed by atomic force microscopy (AFM). The reflect spectrum is measured with the visible-ultraviolet spectrophotometer of 850-type. Other optical constants, such as the effective refractive index, the absorption index, the real and imaginary parts of the effective dielectric constant and the extinction coefficient, are calculated. Effects of the wavelength of the incident light and the porosity on those optical constants are determined.

【基金】 国家自然科学基金(60377002);河北省博士基金
  • 【文献出处】 大气与环境光学学报 ,Journal of Atmospheric and Environmental Optics , 编辑部邮箱 ,2006年05期
  • 【分类号】TN304.05
  • 【被引频次】3
  • 【下载频次】143
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