【摘要】 根据光纤入户(FTTH)的应用特点,选用外延层厚度和电阻率各不相同的三种硅外延片,研制了用于FTTH的P IN硅光电探测器,并与硅单晶材料的PN结光电二极管进行了全程比对。测量结果表明,P IN探测器的暗电流可达1-0 11A量级,响应时间为2 ns。分析了Ⅰ层厚度和电阻率对探测器件暗电流、结电容和响应时间的影响及引起特性差别的原因,为设计能满足光纤通信要求的光电探测器提供了依据。更多还原

【Abstract】 According to the applied characteristics of FTTH,three kinds of silicon epitaxial wafers with different thicknesses and resistivities were chosen to make PIN-photoelectric detectors for FTTH,which were entirely contrasted with PNphotodiode fabricated from a silicon single crystal wafer.The measured values of PIN-photoelectric detectors showed that the order of magnitude of dark current could be 10^-11 A and response time was 2 ns.The influence caused by thickness and resistivity of intrinsic layer on the detectors’ characteristic parameters is analyzed,such as dark current,junction capacitance and response time.These can illumine us to make photoelectric detector for optical fiber communication.更多还原