【摘要】 设计了一个低电源电压的高精密的CMOS带隙电压基准源,采用SMIC 0.18μm CMOS工艺。实现了一阶温度补偿,具有良好的电源抑制比。测试结果表明,在1.5 V电源电压下,电源抑制比为47 dB,在0~80℃的温度范围内,输出电压变化率为0.269%,功耗为0.22 mW,芯片核面积为0.057 mm2。更多还原

【Abstract】 A low power and high precision CMOS bandgap voltage reference circuit is presented.Prototype of the circuit is fabricated using the 0.18 μm CMOS process.It fulfills the first order PTAT(Proportion To Absolute Temperature) temperature curvature compensation with a good PSRR(Power Supply Rejection Ratio).The measured results of this circuit at 1.5 V show that the PSRR is 47 dB.And the output voltage varies from 1.114—1.117 V which is constant within(0.269%) over the temperature range of 0-80 ℃.The power dissipation is 0.22 mW and the active area is 0.057 mm~2.更多还原