【摘要】 采用扫描电镜中的电子背散射衍射(Electron Backscattering Diffraction,EBSD)技术,对硼掺杂的可动悬空硅薄膜和用于激光二极管(LED)的蓝宝石衬底上异质外延生长GaN层中的弹性应变区进行了测量。将菊池图的图像质量(IQ)和Hough转变强度,以及小角度晶界错配的统计数据作为应力敏感参数,研究了单晶材料系统中,微米~亚微米尺度的晶格畸变状态及局域弹性应变场。EBSD测试获得了硅薄膜窗口区域及LED的GaN外延层中的弹性应变分布。更多还原

【Abstract】 The elastic strain regions of the boron-doped silicon free-handing Si diaphragm and the heteroepitaxial GaN layer grown on the sapphire substrate of a LED were measured by electron backscattering diffraction(EBSD).The strain sensitive parameters as Image qualities(IQ),the Hough transforms of the Kikuchi lines,as well as the small angle misorientation were used to evaluate the lattice distortion and the local elastic strain fields of the single crystals system at micron to submicron regions.The elastic stress distribution of the window region of the Si-membrane and the GaN epilayers in LED were obtained by EBSD.更多还原