【摘要】 本文提出一种FET/pHEMT器件噪声参数提取的新方法.该方法利用50Ω输入阻抗噪声系数F50的测量,通过本征H参数和本征级联噪声矩阵CAINT,确定出关于门噪声温度Tg和漏噪声温度Td的线性方程.后对所有频点的线性方程Tg-Td作统计分析,即可确定Tg和Td.再由噪声网络合成原理求得总的级联噪声相关矩阵CA,相应的噪声参数(Fm in,Rn和Γopt)也求出来了.三个FET/pHEMT器件的测量结果显示出,实测参数与Garcia和Lázaro的方法吻合得很好.更多还原

【Abstract】 A new method for measuring the noise parameters of a FET/pHEMT device is proposed.By measuring the matched（50Ω） noise figure F₅₀,based on the intrinsic H-parameters and the intrinsic chain noise matrix C_A^INT,the linear equation of the gate noise temperature T_g and drain noise temperature T_d is obtained.The statistic analysis of the T_g-T_d figure is performed at all frequencies range,and then the measured noise temperatures T_g and T_d are determined.In terms of noise network synthesis theory,the full chain noise matrix C_A is computed,and the corresponding noise parameters(F_min,R_n and Γ_opt) are determined.The measurements for three FET/ pHEMT devices show that the results are perfectly in accordance with these by means of Garcia and Lázaro.更多还原