【摘要】 在建立GCT器件模型的基础上,研究了缓冲层与透明阳极结构对GCT性能影响。模拟结果表明,缓冲层与透明阳极各自区域中的总杂质量是决定GCT的通态压降的关键因素。通过协调各自区域的峰值掺杂浓度与厚度,可以合理地控制该区域的总杂质量,降低GCT的通态压降。此外,缓冲层和透明阳极相结合结构加速了器件关断过程中载流子的泄放,改善了GCT关断性能。这些结果对于进一步优化GCT器件设计与制造有着重要的参考价值。更多还原

【Abstract】 A GCT device model is developed.Simulation results based on this model show that the total amount of impurity in the buffer layer or transparent anode is the key to determine the on-state voltage drop of GCT device.We can reduce the onstate voltage drop by modifying the thickness and doping profile of each layer to control the total amount of impurity.In addition,the turn-off characteristic of GCT device can be improved by employing the buffer layer and transparent anode structure.These results are very useful for designing and realizing GCT devices.更多还原