【摘要】 通过对nMOS器件随天线比增加的阈值电压漂移、跨导变化,MOS电容在TDDB测试后的QBD退化分析来评估在RIE(ReactiveIonEtching)金属前PECVD-TEOS预淀积保护介质层的保护作用,实验结果表明此介质层没有起到足够的保护作用,反而会由于更长的等离子体工艺时间产生更严重的损伤问题。传统的电荷在硅片表面积累理论不足以解释此现象,本文从高能电子隧穿作用来分析此性能退化的原因。更多还原

【Abstract】 By analyzing threshold voltage shift, transcondactance change of nMOS devices and QBD degradation on MOS capacitance under TDDB test, the dielectric layer deposited by PECVD-TEOS before etching metal with RIE was studied. Experimental results show that the dielectric layer has no actual protection on the gate oxide while causing worse damage because of longer plasma processing time. The conventional theory of charging on the surface of silicon can not explain this phenomenon, and the theory of high energy electron tunneling is used to analyze and explain this degradation.更多还原