节点文献
通讯设备用低阻高耐压过流保护器材料研究
Research on Materials of Low Resistivity, High Voltage Over-current Protector for Communication Apparatus
【摘要】 过流保护器要求芯片尺寸为φ5mm×2.2mm,电阻值为15?,耐电压AC330V。采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。经复阻抗谱、SEM及XRD等测试分析表明,材料的微观结构得到了明显改善,PTC性能得以提高。当x(Mn(NO3)2)为0.47%时,材料的居里点为70℃、室温电阻率为14?·cm、温度系数为11.5%℃–1、耐压强度大于165V/mm。
【Abstract】 The required over-current protection chip size of our task is φ 5 mm×2.2 mm, and the corresponding resistance and voltage durability are 15 ? and 330 V(AC). Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired. Through complex impedance spectra, SEM, XRD etc. tests, it was proved that the microstructure and PTC properties of the material were improved. When x(Mn(NO3)2)=0.47%, The Curie point of the material is 70℃, room temperature resistivity is 14 ?·cm, temperature coefficient of resistance(TCR) is 11.5%℃–1, voltage durance is over 165 V/mm.
【Key words】 electronic technology; communication apparatus; over-current protection; liquid-phase donor doping; PTCR;
- 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2006年08期
- 【分类号】TM588
- 【被引频次】1
- 【下载频次】53