【摘要】 采用XRD和SEM对B2O3掺杂Ba0.6Sr0.4TiO3/MgO(简称为BSTM)陶瓷致密化行为和介电性能进行了研究。结果表明:掺杂适量B2O3可明显降低BSTM陶瓷的烧结温度,在1480℃时即可烧结致密化,比未掺杂的BSTM陶瓷烧结温度降低70℃;掺杂量不同,则B2O3在陶瓷体中的存在形式不同,引起其介电性能相应变化;1480℃下烧结,B2O3掺杂量为0.8%(质量分数)时,10kHz下测得试样的εr为138,tanδ为0.0034,εr可调率达12.6%(3MV/m),性能有所提高。更多还原

【Abstract】 The effect of B2O3 dopant on the densification behavior and the dielectric properties of Ba0.6Sr0.4TiO3/MgO (in short, BSTM) ceramics was investigated. The results show that, the sintering temperature of appropriately B2O3-doped BSTM is effectively lowered 70℃ compared with that of undoped BSTM, and at 1 480℃ the ceramic is nearly fully densified ;different dopant contents cause different existing forms of B2O3 in the ceramics, resulting in change of the dielectric properties correspondingly; 0.8% (mass fraction) B2O3-doped BSTM sintered at 1 480℃ demonstrates the improved properties (10 kHz): εr=138, tanδ=0.003 4, T=12.6%(3 MV/m).更多还原