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热丝化学气相沉积制备多晶硅薄膜的研究
Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD
【摘要】 采用热丝化学气相沉积技术制备了多晶硅薄膜。利用Raman、XRD、SEM等检测手段,系统研究了沉积气压、衬底温度、衬底与热丝间距离、衬底种类等实验参数对多晶硅薄膜晶态比、晶面择优取向、晶粒尺寸的影响。得出优化条件:沉积气压42 Pa,衬底温度250℃,衬底与热丝间距离48 mm,在玻璃衬底上制备出晶态比Xc>90%,择优取向为(111),横向晶粒尺寸为200~500 nm,纵向晶粒尺寸为30 nm左右的优质多晶硅薄膜。
【Abstract】 Poly-Si films were deposited by hot-wire chemical vapor deposition,and film structural and morphological properties were characterized by Raman,XRD,and SEM.The effect of parameters,including gas pressure,substrate temperature,space between hot-wore and substrates,and the different kinds of substrates,on poly-Si structure were studied systematically.The results show that the high-quality poly-Si,with particles of 30 nm transverse size and 200~500 nm longitudinal size,90% crystalline ratio,and preferred orientation of(111),can be deposited on glass substrate at the optimal parameters,42 Pa of gas pressure,250℃ of substrate temperature,and 48 mm space between hot-wire and substrates.
【Key words】 inorganic non-metallic materials; hot-wire CVD; poly-Si films; crystalline ratio; preferred orientation;
- 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2006年05期
- 【分类号】TB383.2
- 【被引频次】9
- 【下载频次】495