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热丝化学气相沉积制备多晶硅薄膜的研究

Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD

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【作者】 刘韶华刘艳红吕博佳温小琼

【Author】 LIU Shao-hua,LIU Yan-hong,LU Bo-jia,WEN Xiao-qiong(State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024,China)

【机构】 大连理工大学三束材料改性国家重点实验室大连理工大学三束材料改性国家重点实验室 辽宁大连116024辽宁大连116024

【摘要】 采用热丝化学气相沉积技术制备了多晶硅薄膜。利用Raman、XRD、SEM等检测手段,系统研究了沉积气压、衬底温度、衬底与热丝间距离、衬底种类等实验参数对多晶硅薄膜晶态比、晶面择优取向、晶粒尺寸的影响。得出优化条件:沉积气压42 Pa,衬底温度250℃,衬底与热丝间距离48 mm,在玻璃衬底上制备出晶态比Xc>90%,择优取向为(111),横向晶粒尺寸为200~500 nm,纵向晶粒尺寸为30 nm左右的优质多晶硅薄膜。

【Abstract】 Poly-Si films were deposited by hot-wire chemical vapor deposition,and film structural and morphological properties were characterized by Raman,XRD,and SEM.The effect of parameters,including gas pressure,substrate temperature,space between hot-wore and substrates,and the different kinds of substrates,on poly-Si structure were studied systematically.The results show that the high-quality poly-Si,with particles of 30 nm transverse size and 200~500 nm longitudinal size,90% crystalline ratio,and preferred orientation of(111),can be deposited on glass substrate at the optimal parameters,42 Pa of gas pressure,250℃ of substrate temperature,and 48 mm space between hot-wire and substrates.

【基金】 辽宁省优秀青年教师培训基金资助项目(893204)
  • 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2006年05期
  • 【分类号】TB383.2
  • 【被引频次】9
  • 【下载频次】495
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