【摘要】 采用4.5Ω.cm的p型单晶硅,通过高温气相扩散法将锰掺入硅中,得到高补偿单晶硅。用化学沉积法,在高补偿单晶硅材料的表面镀金属镍膜,经500℃退火15 min,制成Ni电极。用SEM和XPS对电极进行分析,并测试材料的I-V特性曲线。结果表明:经退火后镍与硅形成硅镍化合物(Ni2Si),电极正反向电阻一致,性能稳定,形成欧姆接触。更多还原

【Abstract】 High compensation Si was adopted by diffusing Mn into p-type single crystal Si of 4.5 ?.cm at high temperature.By the chemical deposit method,metal nickel was deposited on the high compensation p-type single crystal Si disc.The sample was annealed at 500℃,15 min.The Ni electrodes were also analyzed using SEM and XPS,and the characteristic curve of I-V was measured.Experimental results show that Ni2Si compound is emerged between Si and Ni by anneal,positive and negative resistance of the electrode is unanimous and ohm contact is formed.更多还原