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TiO₂系压敏陶瓷施主掺杂研究

Research on Donor Doping of TiO₂-based Varistor Ceramics

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【Author】 ZHU Dao-yun1,ZHOU Fang-qiao2,ZHUANG Yan3(1.School of Physics & Engineering,Sun Yat-sen University,Guangzhou 510275,China;2.Physics & Electronic Engineering Institute,Guangzhou University,Guangzhou 510405,China;3.China Electronics Technology Group Corporation No.7 Research Institute,Guangzhou 510310,China)

【机构】中山大学物理科学与工程技术学院；广州大学物理与电子工程学院；中国电子科技集团公司第七研究所广东广州510275；广东广州510405；广东广州510310；

【摘要】研究了Ta2O5和Nb2O5掺杂对TiO2系压敏陶瓷电性能的影响。采用电子陶瓷制备工艺,制备了两组TiO2系压敏陶瓷,借助热电子发射理论,分析了样品的I-V特性及介电频谱特性。结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5.03 V.mm–1)和最大的视在介电常数(εra=1.5×105)。更多还原

【Abstract】 The influences of Ta2O5 and Nb2O5 on the electrical properties of TiO2-based varistor ceramics were studied.The TiO2-based varistor ceramics doped with donor Ta2O5 and Nb2O5 were prepared respectively by electric ceramic preparing technique.The main electrical properties such as I-V characteristic and dielectric spectra of these samples were analyzed and compared by thermal electron emitting mechanism.The results show that the sample doped with Ta2O5 exhibits the lowest breakdown voltage(E10mA = 5.03 V.mm–1) and the biggest apparent dielectric constant(εra=1.5×105).更多还原