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曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜巨磁阻抗效应研究
Giant Magneto-impedance Effect in Trilayer FeCuNbSiB/Cu/FeCuNbSiB Films with a Meander Structure
【摘要】 采用磁控溅射方法,在玻璃基片上制备了曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜。在1~40MHz下,研究了多层膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系。结果表明:在频率为5MHz、磁场强度为12kA/m下,横向和纵向GMI效应分别达–23.5%和–16.8%。薄膜材料的纵向、横向GMI效应随外加磁场变化呈现先增后降,而纵向表现尤为明显。
【Abstract】 Trilayer FeCuNbSiB/Cu/FeCuNbSiB films with a meander structure were prepared by magnetron sputtering method,and the giant magneto-impedance(GMI) effect was investigated in the frequency range of 1~40 MHz.The results show that the GMI values are –23.5% and –16.8% for a frequency of 5 MHz at a magnetic field of 12 kA/m with magnetic field applied along the longitudinal and transverse direction,respectively.Both the longitudinal and the transverse GMI effect increases with applied magnetic field,reaching a maximum at a field of near the anisotropy field,while the longitudinal GMI effect are better than that of the transverse direction.
【Key words】 electronic technology; giant magneto-impedance; trilayer FeCuNbSiB/Cu/FeCuNbSiB film; microfabrication;
- 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2006年01期
- 【分类号】TB383.2
- 【被引频次】1
- 【下载频次】88