【摘要】 在制备所有的NbN超导隧道结的过程中,为了得到良好的隧道结,刻蚀是很关键的一步,我们对反应离子刻蚀(RIE)和离子刻蚀两种不同的方法进行了研究比较.通过对多层结构用三种不同的方法刻蚀,再进行SEM观察切面图像,发现离子刻蚀出来的薄膜边缘,与离子源与基片摆放的方向有很大的关系,而RIE刻蚀的结区边缘较为平缓且结果稳定,有利于我们制备更好质量的超导隧道结.更多还原

【Abstract】 The etching method is a key process during the fabrication of all-NbN superconductor tunnel junctions. In order to make high quality junctions we have done some researches on reaction ion etching(RIE) method and ion etching method. We used three different processes to do the etching on NbN thin film and observed different SEM pictures of the transverse sections. The result shows that the situation of the side of the NbN miro belt is related to the different laying direction of the samples to the ion source. While the result of RIE shows the consistence and the gradient of the side of NbN is quite soft.更多还原