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Si衬底上磁控溅射法生长MgO薄膜

GROWTH OF MgO THIN FILMS ON Si SUBSTRATES BY MAGNETRON SPUTTERING

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【作者】 赵少奇康琳吴培亨叶宇达

【Author】 ZHao SHao-Qi~1 Kang Lin~1 Wu Pei-Heng~2 Ye Yu-Da ~ 1 Research Institute of Superconductor Electronics, Dept. of Electronic Science & Engineering, Nanjing University, Nanjing 210093 ~ 2 Modern Analysis Centre, Nanjing University, Nanjing 210093

【机构】 南京大学电子系超导电子学研究所南京大学现代分析中心 南京210093南京210093

【摘要】 我们用射频磁控溅射方法,在Si(100)单晶衬底上生长MgO薄膜,借助X射线衍射(XRD)分析发现,我们获得了两种不同晶体结构的MgO薄膜,分别是常规的晶格常数为0.421nm的MgO薄膜和晶格常数为0.812nm的新结构的MgO薄膜.我们研究了溅射气压、衬底温度等工艺参数对两种晶体结构择取的影响.实验表明,高的溅射气压和高的衬底温度有利于晶格常数为0.812nm的新结构的MgO相的形成.在高的气压和温度下,我们制备出了晶格常数为0.812nm,具有很好的4次对称性的MgO外延薄膜.利用原子力显微镜(AFM)研究了这种薄膜的表面形貌.

【Abstract】 We deposited MgO thin films on Si(100) substrates using rf magnetron sputtering method. X-ray diffraction results demonstrated that we obtained two types of MgO with different lattice structures, they are, traditional MgO with a lattice constant of 0.421nm and a new uype of MgO with a lattice constant of 0.812nm. We found that high gas pressure and high substrate temperature are in favor of the growth of this new MgO films. At high gas pressure and high substrate temperature, we obtained high quality epitaxial MgO thin films with this new lattice structure, which showed good 4-fold symmetry. And the surface morphology of such thin films were investigated by atom force microscopy.

【关键词】 MgO射频磁控溅射0.812nm0.421nm
【Key words】 MgOrf magnetron sputtering0.812nm0.421nm
【基金】 科技部873计划(项目编号:2006CB610006);国家自然科学基金(项目编号:10390163)资助的课题
  • 【文献出处】 低温物理学报 ,Chinese Journal of Low Temperature Physics , 编辑部邮箱 ,2006年01期
  • 【分类号】O484.1
  • 【被引频次】4
  • 【下载频次】415
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