【摘要】 我们用射频磁控溅射方法,在Si(100)单晶衬底上生长MgO薄膜,借助X射线衍射(XRD)分析发现,我们获得了两种不同晶体结构的MgO薄膜,分别是常规的晶格常数为0.421nm的MgO薄膜和晶格常数为0.812nm的新结构的MgO薄膜.我们研究了溅射气压、衬底温度等工艺参数对两种晶体结构择取的影响.实验表明,高的溅射气压和高的衬底温度有利于晶格常数为0.812nm的新结构的MgO相的形成.在高的气压和温度下,我们制备出了晶格常数为0.812nm,具有很好的4次对称性的MgO外延薄膜.利用原子力显微镜(AFM)研究了这种薄膜的表面形貌.更多还原

【Abstract】 We deposited MgO thin films on Si(100) substrates using rf magnetron sputtering method. X-ray diffraction results demonstrated that we obtained two types of MgO with different lattice structures, they are, traditional MgO with a lattice constant of 0.421nm and a new uype of MgO with a lattice constant of 0.812nm. We found that high gas pressure and high substrate temperature are in favor of the growth of this new MgO films. At high gas pressure and high substrate temperature, we obtained high quality epitaxial MgO thin films with this new lattice structure, which showed good 4-fold symmetry. And the surface morphology of such thin films were investigated by atom force microscopy.更多还原