【摘要】 用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了 TiN 薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了 TiN 薄膜的电学性质．结果表明,多次循环会引入界面而增大电阻率, 与薄膜成分和微结构分析的结果一致．得到了单循环的最优厚度以使样品电阻率最低．通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(Via)直径越小,TiN 薄膜对介窗电阻的影响越大．更多还原

【Abstract】 TiN films was prepared by metal organic chemical vapor deposition (MOCVD) with different processes on blanket films and the electrical properties was investigated.The results showed that a process of multiple cycles was supposed to introduce extra interfaces,which significantly increases film resistivity.This was proved by compositional and micro structural analysis.An optimum thickness for a single cycle,which results in the lowest film resistivity,was also validated.Furthermore,it was found that the impact of TiN films on Via resistance is greater when the Via size is smaller.更多还原